Future smartphones could see significantly greater built-in flash storage as Samsung has successfully demonstrated a way to overcome the typical 16-64Gb limit of individual memory chips, reports Engadget.

The main challenge in producing higher-capacity flash storage is one of scale — as density goes up, so does cell interference and the chances of a breakdown. Samsung may have overcome that barrier (if temporarily) by mass-producing the first 3D vertical NAND memory, or V-NAND

This is the reason that, if you open up a typical SSD, you’ll find it’s made up of a whole bunch of 16Gb chips – and the reason that squeezing much more than 64Gb storage into a smartphone gets challenging. Samsung had previously managed to squeeze 64Gb into a single NAND chip, but when you can stack up to 24 layers of 16Gb storage on top of each other in a chip not much thicker than existing ones, you create the potential for up to 384Gb on a single chip.

We may not be seeing that kind of storage in a phone anytime soon, but we can certainly expect capacities to increase and SSDs to get cheaper once the new chips are in mass production.

به لطف دستاوردهای سامسونگ، اسمارت فون های آینده می توانند حافظه داخلی بسیار بیشتری داشته باشند. این شرکت به تازگی توانسته با موفقیت تولید انبوه حافظه های فلش سه بعدی خود را آغاز کند و این گونه دیگر محدودیت ۱۶ تا ۶۴ گیگابایتی تلفن های هوشمند بی معنی خواهد شد.

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